Strongly driven by the electric vehicle market, the global silicon carbide SiC device market is growing with a compound annual growth rate of 34%. The SiC applications are still limited by poor quality of the underlying wafer materials. KISAB’s novel and innovative growth technology, emanating from the Linköping Technical University, enables growth of virtually defect free SiC wafers and promises to revolutionize the market for SiC devices.
Yole Développement, the most respected market analysis firm in the industry, estimates the SiC device market to be worth $6,3b in 2027 and has identified KISAB as the “innovative SiC growth technology”.
The €7.5m investment round was led by Fairpoint Capital with participation from existing investors, including Industrifonden, Ingka GreenTech and LPE.
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